Infineon IRFP250NPBF N-channel MOSFET, 30 A, 200 V HEXFET, 3-Pin TO-247AC

Maximum Continuous Drain Current: 30 A

Transistor Material: Si

Width: 5.3mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 200 V

Maximum Gate Threshold Voltage: 4V

Package Type: TO-247AC

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 123 nC @ 10 V

Channel Type: N

Length: 15.9mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 214 W Series: HEXFET Maximum Gate Source Voltage: -20 V, +20 V Height: 20.3mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.3V Maximum Drain Source Resistance: 75 mΩ

This is N-channel MOSFET 30 A 200 V HEXFET 3-Pin TO-247AC manufactured by Infineon. The manufacturer part number is IRFP250NPBF. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.3mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 123 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 214 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 20.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 75 mω maximum drain source resistance.