Infineon IPP041N12N3GXKSA1 N-channel MOSFET, 120 A, 120 V OptiMOS 3, 3-Pin TO-220

Maximum Continuous Drain Current: 120 A

Transistor Material: Si

Width: 4.57mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 120 V

Maximum Gate Threshold Voltage: 4V

Package Type: TO-220

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 158 nC

Channel Type: N

Length: 10.36mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 300 W Series: OptiMOS™ 3 Maximum Gate Source Voltage: -20 V, +20 V Height: 15.95mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 4.1 mΩ

This is N-channel MOSFET 120 A 120 V OptiMOS 3 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP041N12N3GXKSA1. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.57mm wide. The product offers single transistor configuration. It has a maximum of 120 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 158 nc. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.95mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 4.1 mω maximum drain source resistance.