Wolfspeed CMF20120D N-channel SiC MOSFET, 42 A, 1200 V, 3-Pin TO-247

Category: Power MOSFET

Dimensions: 16.13 x 5.21 x 21.1mm

Maximum Continuous Drain Current: 42 A

Transistor Material: SiC

Width: 5.21mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 1200 V

Maximum Gate Threshold Voltage: 4.8V

Package Type: TO-247

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3.2V

Maximum Operating Temperature: +135 °C

Typical Gate Charge @ Vgs: 90.8 nC @ 0/20 V Channel Type: N Typical Input Capacitance @ Vds: 1915 pF @ 800 V Length: 16.13mm Pin Count: 3 Forward Transconductance: 7.9S Typical Turn-Off Delay Time: 40 ns Mounting Type: Through Hole Channel Mode: Enhancement Maximum Power Dissipation: 215 W Maximum Gate Source Voltage: -5/+20 V Height: 21.1mm Typical Turn-On Delay Time: 13 ns Minimum Operating Temperature: -55 °C Forward Diode Voltage: 3.5V Maximum Drain Source Resistance: 120 mΩ

This is N-channel SiC MOSFET 42 A 1200 V 3-Pin TO-247 manufactured by Wolfspeed. The manufacturer part number is CMF20120D. It is of power mosfet category . The given dimensions of the product include 16.13 x 5.21 x 21.1mm. While 42 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 1200 v drain source voltage. The product carries 4.8v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.2v. It has a maximum operating temperature of +135 °c. With a typical gate charge at Vgs includes 90.8 nc @ 0/20 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1915 pf @ 800 v . Its accurate length is 16.13mm. It contains 3 pins. The forward transconductance is 7.9s . Whereas, its typical turn-off delay time is about 40 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 215 w maximum power dissipation. It features a maximum gate source voltage of -5/+20 v. In addition, the height is 21.1mm. In addition, it has a typical 13 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 3.5v . It provides up to 120 mω maximum drain source resistance.