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Maximum Continuous Drain Current: 204 A

Transistor Material: Si

Width: 5.1mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 40 V

Maximum Gate Threshold Voltage: 2.2V

Package Type: VSON-CLIP

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 1.5V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 25 nC @ 4.5 V

Channel Type: N

Length: 6.1mm Pin Count: 8 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 3.2 W Series: NexFET Maximum Gate Source Voltage: -20 V, +20 V Height: 1.05mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 3.3 mΩ FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 8-PowerTDFN Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V title: CSD18502Q5B Vgs(th) (Max) @ Id: 2.2V @ 250µA REACH Status: REACH Unaffected edacadModel: CSD18502Q5B Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V edacadModelUrl: /en/models/3844815 Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Qualification: – standardLeadTime: 12 Weeks Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V Mounting Type: Surface Mount Grade: – Series: NexFET™ Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Supplier Device Package: 8-VSON-CLIP (5×6) Packaging: Tape & Reel (TR) Current – Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: CSD18502 ECCN: EAR99

This ismanufactured by Texas Instruments. The manufacturer part number is CSD18502Q5B. While 204 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.1mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of vson-clip. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 25 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3.2 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.3 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 2.3mohm @ 30a, 10v. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.2w (ta), 156w (tc). It has a long 12 weeks standard lead time. The product’s input capacitance at maximum includes 5070 pf @ 20 v. The product nexfet™, is a highly preferred choice for users. The maximum gate charge and given voltages include 68 nc @ 10 v. 8-vson-clip (5×6) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 26a (ta), 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd18502, a base product number of the product. The product is designated with the ear99 code number.

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