STMicroelectronics SCTWA90N65G2V-4

Maximum Drain Source Voltage: 650 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: SCTWA90N65G2V-4

Channel Type: N

Maximum Gate Threshold Voltage: 5V

Maximum Drain Source Resistance: 0.024 O

Package Type: HiP247-4

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 119 A

Transistor Material: SiC

Pin Count: 4

FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 5V @ 1mA Operating Temperature: -55°C ~ 200°C (TJ) Package / Case: TO-247-3 Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected edacadModel: SCTWA90N65G2V-4 Models FET Type: N-Channel edacadModelUrl: /en/models/13592608Package: Tube Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -10V Moisture Sensitivity Level (MSL): 3 (168 Hours) Power Dissipation (Max): 565W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V standardLeadTime: 52 Weeks Mounting Type: Through Hole Series: – Supplier Device Package: HiP247™ Long Leads Current – Continuous Drain (Id) @ 25°C: 119A (Tc) Technology: SiCFET (Silicon Carbide) Base Product Number: SCTWA90 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is SCTWA90N65G2V-4. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product sctwa90n65g2v-4, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.024 o maximum drain source resistance. The package is a sort of hip247-4. It consists of 1 elements per chip. While 119 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 24mohm @ 50a, 18v. The maximum gate charge and given voltages include 157 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is +22v, -10v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 565w (tc). The product’s input capacitance at maximum includes 3380 pf @ 400 v. It has a long 52 weeks standard lead time. hip247™ long leads is the supplier device package value. The continuous current drain at 25°C is 119a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sctwa90, a base product number of the product. The product is designated with the ear99 code number.