ROHM RD3S075CNTL1 N-Channel MOSFET, 7.5 A, 190 V RD3S075CN, 3-Pin DPAK

Maximum Continuous Drain Current: 7.5 A

Width: 6.4mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 190 V

Maximum Gate Threshold Voltage: 2.5V

Package Type: TO-252

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 0.5V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 30 nC @ 10 V

Channel Type: N

Length: 6.8mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 52 W Series: RD3S075CN Maximum Gate Source Voltage: ±20 V Height: 2.4mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.5V Maximum Drain Source Resistance: 336 mΩ

This is N-Channel MOSFET 7.5 A 190 V RD3S075CN 3-Pin DPAK manufactured by ROHM. The manufacturer part number is RD3S075CNTL1. While 7.5 a of maximum continuous drain current. Furthermore, the product is 6.4mm wide. The product offers single transistor configuration. It has a maximum of 190 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 30 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 52 w maximum power dissipation. The product rd3s075cn, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.4mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 336 mω maximum drain source resistance.