N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK Vishay SiHA690N60E-GE3

Maximum Drain Source Voltage: 650 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: E

Channel Type: N

Maximum Gate Threshold Voltage: 5V

Maximum Drain Source Resistance: 0.7 Ω

Package Type: TO-220 FP

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 2.7 A, 4.3 A

Pin Count: 3

This is N-Channel MOSFET 2.7 A 4.3 A 650 V 3-Pin Thin-Lead TO-220 FULLPAK manufactured by Vishay. The manufacturer part number is SiHA690N60E-GE3. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product e, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.7 ω maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 2.7 a, 4.3 a of maximum continuous drain current. It contains 3 pins.