Infineon SPW20N60C3FKSA1 N-channel MOSFET, 21 A, 650 V CoolMOS C3, 3-Pin TO-247

Maximum Continuous Drain Current: 20.7 A

Transistor Material: Si

Width: 5.3mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 650 V

Maximum Gate Threshold Voltage: 3.9V

Package Type: TO-247

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2.1V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 87 nC @ 10 V

Channel Type: N

Length: 15.9mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 208 W Series: CoolMOS™ C3 Maximum Gate Source Voltage: -20 V, +20 V Height: 20.95mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 190 mΩ

This is N-channel MOSFET 21 A 650 V CoolMOS C3 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is SPW20N60C3FKSA1. While 20.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.3mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 87 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 208 w maximum power dissipation. The product coolmos™ c3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 20.95mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 190 mω maximum drain source resistance.