Category: Power MOSFET
Dimensions: 10.54 x 9.65 x 4.83mm
Maximum Continuous Drain Current: 197 A
Transistor Material: Si
Width: 9.65mm
Transistor Configuration: Single
Maximum Drain Source Voltage: 75 V
Maximum Gate Threshold Voltage: 3.7V
Package Type: D2PAK
Number of Elements per Chip: 1
Minimum Gate Threshold Voltage: 2.1V
Maximum Operating Temperature: +175 °C
Typical Gate Charge @ Vgs: 180 nC @ 10 V Channel Type: N Typical Input Capacitance @ Vds: 10130 pF @ 25 V Length: 10.54mm Pin Count: 6 Forward Transconductance: 182S Typical Turn-Off Delay Time: 123 ns Mounting Type: Surface Mount Channel Mode: Enhancement Maximum Power Dissipation: 294 W Series: HEXFET Maximum Gate Source Voltage: ±20 V Height: 4.83mm Typical Turn-On Delay Time: 17 ns Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 3 mΩ
This is N-channel MOSFET 197 A 75 V HEXFET 6-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFS7734TRL7PP. It is of power mosfet category . The given dimensions of the product include 10.54 x 9.65 x 4.83mm. While 197 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 75 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 180 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 10130 pf @ 25 v . Its accurate length is 10.54mm. It contains 6 pins. The forward transconductance is 182s . Whereas, its typical turn-off delay time is about 123 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 294 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.83mm. In addition, it has a typical 17 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 3 mω maximum drain source resistance.
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