Infineon IRFS7430TRL7PP N-channel MOSFET, 522 A, 40 V HEXFET, 6-Pin D2PAK

Maximum Continuous Drain Current: 522 A

Transistor Material: Si

Width: 9.65mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 40 V

Maximum Gate Threshold Voltage: 3.9V

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2.2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 305 nC @ 10 V

Channel Type: N

Length: 10.67mm Pin Count: 6 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 375 W Series: HEXFET Maximum Gate Source Voltage: -20 V, +20 V Height: 4.83mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 750 μΩ

This is N-channel MOSFET 522 A 40 V HEXFET 6-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFS7430TRL7PP. While 522 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 305 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 375 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 750 μω maximum drain source resistance.