Infineon IRFB4110GPBF N-channel MOSFET, 180 A, 100 V HEXFET, 3-Pin TO-220AB

Maximum Continuous Drain Current: 180 A

Transistor Material: Si

Width: 4.83mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Maximum Gate Threshold Voltage: 4V

Package Type: TO-220AB

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 150 nC @ 10 V

Channel Type: N

Length: 10.67mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 370 W Series: HEXFET Maximum Gate Source Voltage: -20 V, +20 V Height: 16.51mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 4.5 mΩ

This is N-channel MOSFET 180 A 100 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRFB4110GPBF. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 150 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 370 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.51mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 4.5 mω maximum drain source resistance.