Infineon IRF5210LPBF P-channel MOSFET, 38 A, 100 V HEXFET, 3-Pin I2PAK

Maximum Continuous Drain Current: 38 A

Transistor Material: Si

Width: 4.69mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Maximum Gate Threshold Voltage: 4V

Package Type: I2PAK (TO-262)

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 150 nC @ 10 V

Channel Type: P

Length: 10.54mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 3.1 W Series: HEXFET Maximum Gate Source Voltage: -20 V, +20 V Height: 10.54mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 60 mΩ

This is P-channel MOSFET 38 A 100 V HEXFET 3-Pin I2PAK manufactured by Infineon. The manufacturer part number is IRF5210LPBF. While 38 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.69mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 150 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.54mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 3.1 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 10.54mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 60 mω maximum drain source resistance.