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Category: Power MOSFET

Dimensions: 16.13 x 21.1 x 5.21mm

Maximum Continuous Drain Current: 5.7 A

Transistor Material: Si

Width: 21.1mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 900 V

Package Type: TO-247

Number of Elements per Chip: 1

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 34 nC @ 10 V

Channel Type: N

Typical Input Capacitance @ Vds: 850 pF @ 100 V Length: 16.13mm Pin Count: 3 Typical Turn-Off Delay Time: 400 ns Mounting Type: Through Hole Channel Mode: Enhancement Maximum Power Dissipation: 89 W Series: CoolMOS C3 Maximum Gate Source Voltage: ±30 V Height: 5.21mm Typical Turn-On Delay Time: 70 ns Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 1 Ω

This is N-channel MOSFET 5.7 A 900 V CoolMOS C3 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW90R1K0C3. It is of power mosfet category . The given dimensions of the product include 16.13 x 21.1 x 5.21mm. While 5.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 21.1mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 850 pf @ 100 v . Its accurate length is 16.13mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 400 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 89 w maximum power dissipation. The product coolmos c3, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 5.21mm. In addition, it has a typical 70 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1 ω maximum drain source resistance.

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