Infineon IPW60R190C6FKSA1 N-channel MOSFET, 20.2 A, 650 V CoolMOS C6, 3-Pin TO-247

Maximum Continuous Drain Current: 20.2 A

Transistor Material: Si

Width: 5.21mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 650 V

Maximum Gate Threshold Voltage: 3.5V

Package Type: TO-247

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2.5V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 63 nC @ 10 V

Channel Type: N

Length: 16.13mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 151 W Series: CoolMOS™ C6 Maximum Gate Source Voltage: -20 V, +20 V Height: 21.1mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 190 mΩ

This is N-channel MOSFET 20.2 A 650 V CoolMOS C6 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW60R190C6FKSA1. While 20.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 63 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 151 w maximum power dissipation. The product coolmos™ c6, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 21.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 190 mω maximum drain source resistance.