Infineon IPP60R099P6XKSA1 N-channel MOSFET, 37.9 A, 650 V CoolMOS P6, 3+Tab-Pin TO-220

Maximum Continuous Drain Current: 37.9 A

Width: 4.57mm

Maximum Drain Source Voltage: 650 V

Maximum Gate Threshold Voltage: 4.5V

Package Type: TO-220

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3.5V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 70 nC @ 10 V

Channel Type: N

Length: 10.36mm

Pin Count: 3

Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 278 W Series: CoolMOS™ P6 Maximum Gate Source Voltage: -30 V, +30 V Height: 15.95mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 0.9V Maximum Drain Source Resistance: 99 mΩ

This is N-channel MOSFET 37.9 A 650 V CoolMOS P6 3+Tab-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP60R099P6XKSA1. While 37.9 a of maximum continuous drain current. Furthermore, the product is 4.57mm wide. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 70 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 278 w maximum power dissipation. The product coolmos™ p6, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.95mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.9v . It provides up to 99 mω maximum drain source resistance.