Infineon IPP020N06NAKSA1 N-channel MOSFET, 120 A, 60 V OptiMOS 5, 3-Pin TO-220

Maximum Continuous Drain Current: 120 A

Transistor Material: Si

Width: 4.57mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 60 V

Package Type: TO-220

Number of Elements per Chip: 1

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 106 nC @ 10 V

Channel Type: N

Length: 10.36mm

Pin Count: 3

Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 214 W Series: OptiMOS™ 5 Maximum Gate Source Voltage: -20 V, +20 V Height: 15.95mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 3 mΩ

This is N-channel MOSFET 120 A 60 V OptiMOS 5 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP020N06NAKSA1. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.57mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 106 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 214 w maximum power dissipation. The product optimos™ 5, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.95mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 3 mω maximum drain source resistance.