Maximum Continuous Drain Current: 80 A
Transistor Material: Si
Width: 9.45mm
Transistor Configuration: Single
Maximum Drain Source Voltage: 100 V
Maximum Gate Threshold Voltage: 3.5V
Package Type: D2PAK (TO-263)
Number of Elements per Chip: 1
Minimum Gate Threshold Voltage: 2V
Maximum Operating Temperature: +175 °C
Typical Gate Charge @ Vgs: 42 nC @ 10 V
Channel Type: N
Length: 10.31mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 125 W Series: OptiMOS™ 3 Maximum Gate Source Voltage: -20 V, +20 V Height: 4.57mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 15.1 mΩ
The Infineon IPB083N10N3GATMA1 is a high-performance N-channel MOSFET designed to meet the demands of today’s fast-switching and high-efficiency power applications. This transistor delivers excellent switching performance, low on-resistance, and high-power density. Housed in a compact 3-pin D²PAK surface-mount package, it is ideal for space-constrained applications without sacrificing thermal efficiency or reliability. This Infineon MOSFET provides a robust, energy-efficient solution trusted by engineers in the UK.
Salient Features and Benefits of Buying the Infineon IPB083N10N3GATMA1, N-channel MOSFET, 3-Pin D2PAK, Surface Mount
- 80 a continuous drain current
- 100v drain-source voltage
- Optimos 3 technology
- 3-pin d²pak package
- Fast switching capability
- Increased energy efficiency
- Compact power design
- Reliable in harsh environments
- Lower system costs
Usage Information of the N-channel MOSFET, Surface Mount
- Automotive ECU and powertrain systems
- DC-DC converters and power management units
- Industrial motor drives and servo controls
- Solar inverters and UPS systems
- Battery management and high-efficiency switching regulators
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