Infineon IPB026N06N N-channel MOSFET, 100 A, 60 V OptiMOS 5, 3-Pin TO-263

Category: Power MOSFET

Dimensions: 10.31 x 11.05 x 4.57mm

Maximum Continuous Drain Current: 100 A

Transistor Material: Si

Width: 11.05mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 60 V

Package Type: TO-263

Number of Elements per Chip: 1

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 56 nC @ 10 V

Channel Type: N

Typical Input Capacitance @ Vds: 4100 pF @ 30 V Length: 10.31mm Pin Count: 3 Forward Transconductance: 160S Typical Turn-Off Delay Time: 30 ns Mounting Type: Surface Mount Channel Mode: Enhancement Maximum Power Dissipation: 136 W Series: OptiMOS 5 Maximum Gate Source Voltage: ±20 V Height: 4.57mm Typical Turn-On Delay Time: 17 ns Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 3.9 mΩ

This is N-channel MOSFET 100 A 60 V OptiMOS 5 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IPB026N06N. It is of power mosfet category . The given dimensions of the product include 10.31 x 11.05 x 4.57mm. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.05mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of to-263. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 56 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 4100 pf @ 30 v . Its accurate length is 10.31mm. It contains 3 pins. The forward transconductance is 160s . Whereas, its typical turn-off delay time is about 30 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 136 w maximum power dissipation. The product optimos 5, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.57mm. In addition, it has a typical 17 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 3.9 mω maximum drain source resistance.