Infineon IKP30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin 188, Through Hole

Mounting Type: Through Hole

Maximum Power Dissipation: 188 W

Maximum Collector Emitter Voltage: 650 V

Number of Transistors: 1

Maximum Continuous Collector Current: 55 A

Maximum Gate Emitter Voltage: +/-20V

Package Type: 188

Pin Count: 3

This is IGBT 55 A 650 V 3-Pin 188 Through Hole manufactured by Infineon. The manufacturer part number is IKP30N65H5XKSA1. The product is available in through hole configuration. Provides up to 188 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 55 a continuous collector current . It offers a maximum +/-20v gate emitter voltage . The package is a sort of 188. It contains 3 pins.