Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263

Maximum Power Dissipation: 270 W

Maximum Collector Emitter Voltage: 650 V

Number of Transistors: 1

Channel Type: N

Maximum Continuous Collector Current: 80 A

Maximum Gate Emitter Voltage: 20V

Package Type: TO-263

Pin Count: 3

This is IGBT 80 A 650 V 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IGB50N65H5ATMA1. Provides up to 270 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of to-263. It contains 3 pins.