Infineon FP50R06W2E3BOMA1 IGBT Module, 65 A 600 V

Maximum Power Dissipation: 175 W

Maximum Collector Emitter Voltage: 600 V

Number of Transistors: 7

Maximum Continuous Collector Current: 65 A

Maximum Gate Emitter Voltage: +/-20V

This is IGBT Module 65 A 600 V manufactured by Infineon. The manufacturer part number is FP50R06W2E3BOMA1. Provides up to 175 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). It has 7 transistors . The product has a maximum 65 a continuous collector current . It offers a maximum +/-20v gate emitter voltage .