Infineon BSC100N10NSFGATMA1 N-channel MOSFET, 90 A, 100 V OptiMOS 2, 8-Pin TDSON

Maximum Drain Source Voltage: 100 V

Typical Gate Charge @ Vgs: 33 nC @ 10 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Maximum Power Dissipation: 156 W

Series: OptiMOS 2

Maximum Gate Source Voltage: -20 V, +20 V

Height: 1.1mm

Width: 5.35mm

Length: 6.1mm

Maximum Drain Source Resistance: 10 mΩ

Package Type: TDSON

Number of Elements per Chip: 1 Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 90 A Transistor Material: Si Forward Diode Voltage: 1.2V Channel Type: N Maximum Operating Temperature: +150 °C Pin Count: 8 Transistor Configuration: Single

This is N-channel MOSFET 90 A 100 V OptiMOS 2 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC100N10NSFGATMA1. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 33 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 156 w maximum power dissipation. The product optimos 2, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Furthermore, the product is 5.35mm wide. Its accurate length is 6.1mm. It provides up to 10 mω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 90 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.