Dual Silicon N-Channel MOSFET, 34 A, 650 V, 3-Pin D2PAK Vishay SIHB085N60EF-GE3

Maximum Drain Source Voltage: 650 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Channel Type: N

Package Type: TO-263

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 34 A

Transistor Material: Silicon

Pin Count: 3

This is Dual Silicon N-Channel MOSFET 34 A 650 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB085N60EF-GE3. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of to-263. It consists of 2 elements per chip. While 34 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.