Dual Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH085N60EF-T1GE3

Maximum Drain Source Voltage: 650 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Channel Type: N

Package Type: PowerPAK 8 x 8

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 30 A

Transistor Material: Silicon

Pin Count: 4

This is Dual Silicon N-Channel MOSFET 30 A 650 V 4-Pin PowerPAK 8 x 8 manufactured by Vishay. The manufacturer part number is SIHH085N60EF-T1GE3. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of powerpak 8 x 8. It consists of 2 elements per chip. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins.