Maximum Drain Source Voltage: 650 V
Mounting Type: Surface Mount
Channel Mode: Enhancement
Series: CoolMOS™
Channel Type: N
Maximum Gate Threshold Voltage: 4.5V
Maximum Drain Source Resistance: 0.065 O
Package Type: ThinkPAK 8 x 8
Number of Elements per Chip: 1
Maximum Continuous Drain Current: 97 A
Pin Count: 5
This is Dual N-Channel MOSFET Transistor & Diode 97 A 650 V 5-Pin PG-VSON-4 manufactured by Infineon. The manufacturer part number is IPL60R095CFD7AUMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.065 o maximum drain source resistance. The package is a sort of thinkpak 8 x 8. It consists of 1 elements per chip. While 97 a of maximum continuous drain current. It contains 5 pins.
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