Wolfspeed C3M0065090J N-channel SiC MOSFET, 35 A, 900 V, 7-Pin D2PAK

Maximum Continuous Drain Current: 35 A

Transistor Material: SiC

Width: 10.99mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 900 V

Maximum Gate Threshold Voltage: 2.1V

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 1.8V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 30 nC @ 15 V

Channel Type: N

Length: 10.23mm Pin Count: 7 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 113 W Maximum Gate Source Voltage: +25 V Height: 4.57mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 4.4V Maximum Drain Source Resistance: 78 mΩ

This is N-channel SiC MOSFET 35 A 900 V 7-Pin D2PAK manufactured by Wolfspeed. The manufacturer part number is C3M0065090J. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 10.99mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The product carries 2.1v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 30 nc @ 15 v. The product is available in [Cannel Type] channel. Its accurate length is 10.23mm. It contains 7 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 113 w maximum power dissipation. It features a maximum gate source voltage of +25 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 4.4v . It provides up to 78 mω maximum drain source resistance.