Dimensions: 10.36 x 4.57 x 15.95mm
Mounting Type: Through Hole
Maximum Power Dissipation: 105 W
Maximum Collector Emitter Voltage: 650 V
Channel Type: N
Maximum Continuous Collector Current: 30 A
Maximum Gate Emitter Voltage: ±20V
Package Type: TO-220
Minimum Operating Temperature: -40 °C
Gate Capacitance: 930pF
Maximum Operating Temperature: +175 °C
Pin Count: 3
Energy Rating: 0.17mJ Transistor Configuration: Single
This is IGBT 30 A 650 V 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IKP15N65F5XKSA1. The given dimensions of the product include 10.36 x 4.57 x 15.95mm. The product is available in through hole configuration. Provides up to 105 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 30 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220. Whereas, the minimum operating temperature of the product is -40 °c. It has approximately 930pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 0.17mj energy rating . The product offers single transistor configuration.
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