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Dimensions: 10.36 x 4.57 x 15.95mm

Mounting Type: Through Hole

Maximum Power Dissipation: 105 W

Maximum Collector Emitter Voltage: 650 V

Channel Type: N

Maximum Continuous Collector Current: 30 A

Maximum Gate Emitter Voltage: ±20V

Package Type: TO-220

Minimum Operating Temperature: -40 °C

Gate Capacitance: 930pF

Maximum Operating Temperature: +175 °C

Pin Count: 3

Energy Rating: 0.17mJ Transistor Configuration: Single

This is IGBT 30 A 650 V 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IKP15N65F5XKSA1. The given dimensions of the product include 10.36 x 4.57 x 15.95mm. The product is available in through hole configuration. Provides up to 105 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 30 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220. Whereas, the minimum operating temperature of the product is -40 °c. It has approximately 930pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 0.17mj energy rating . The product offers single transistor configuration.

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